Low voltage high speed 8T SRAM cell for ultra-low power applications
نویسندگان
چکیده
منابع مشابه
Design of Low Power Sram Memory Using 8t Sram Cell
Low power design has become the major challenge of present chip designs as leakage power has been rising with scaling of technologies. As modern technology is spreading fast, it is very important to design low power, high performance, and fast responding SRAM (Static Random Access Memory) since they are critical component in high performance processors. The Conventional 6T SRAM cell is very muc...
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Speed, power consumption and area, are some of the most important factors of concern in modern day memory design. As we move towards Deep Sub-Micron Technologies, the problems of leakage current, noise and cell stability due to physical parameter variation becomes more pronounced. In this paper we have designed an 8T Read Decoupled Dual Port SRAM Cell with Dual Threshold Voltage and characteriz...
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In order to achieve a longer battery life suppression of energy consumption is vital. A demand for design methods for less energy consumption is increasing. The subthreshold scaling can reduce energy per cycle significantly by the scaling of supply voltage (VDD) below threshold voltage (Vth). Threshold voltage of CMOS technology represents the value of the gate-source voltage when the current i...
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this paper presents a novel fully differential (FD) ultra high common mode rejection ratio (CMRR) current operational amplifier (COA) with very low input impedance. Its FD structure that attenuates common mode signals over all stages grants ultra high CMRR and power supply rejection ratio (PSRR) that makes it suitable for mixed mode and accurate applications. Its performance is verified by HSPI...
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Portable devices demand for low power dissipation. To reduce power dissipation, the subsystem in a device needs to be designed to operate at low power and also consume low power. Significant progress has been made in low power design of dynamic RAM’s. Static RAM’s are also critical in most VLSI based system on chip applications. Basic SRAM bit cell consists of 6T. Few designs using 4T are also ...
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ژورنال
عنوان ژورنال: International Journal of Engineering & Technology
سال: 2018
ISSN: 2227-524X
DOI: 10.14419/ijet.v7i3.29.18464